发明名称 |
III NITRIDE-BASED SEMICONDUCTOR LASER DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a III nitride-based semiconductor light emitting device which is improved in light emitting characteristic without increasing the manufacturing cost. SOLUTION: This III nitride-based semiconductor light emitting device contains an n-side AlGaN clad layer, n-side guide layer, active layer, p-side guide layer, and p-side AlGaN clad layer. The refractive index 8 of the p-side guide layer is larger than that 5 of the n-side guide layer.
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申请公布号 |
JP2002094188(A) |
申请公布日期 |
2002.03.29 |
申请号 |
JP20000283393 |
申请日期 |
2000.09.19 |
申请人 |
PIONEER ELECTRONIC CORP;ROHM CO LTD |
发明人 |
KIMURA YOSHINORI;WATANABE ATSUSHI;SONOBE MASAYUKI |
分类号 |
H01S5/343;H01S5/20;H01S5/30;H01S5/323;(IPC1-7):H01S5/343 |
主分类号 |
H01S5/343 |
代理机构 |
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代理人 |
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地址 |
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