| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, where in forming an element separation region by an STI method, the exposure of a semiconductor substrate at a trench top part is surely prevented, for simplifying the manufacturing process and coping with a finer element. SOLUTION: There are provided a process (a) where a first protective film and a second protective film are sequentially deposited on a semiconductor substrate, a process (b) where an opening is formed in a region, corresponding to an element separation region of the first and second protective films, a process (c) where a groove is formed on the semiconductor substrate using the acquired second protective film as a mask, a process (d) where a third insulating film and a fourth insulating film are sequentially laminated on the semiconductor substrate comprising the groove, a process (e) where the fourth insulating film is polished until at least a surface of the third insulating film is exposed, and a process (f) where the semiconductor substrate surface is exposed, for forming the element separation region on the semiconductor substrate.
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