FILM-FORMING MATERIAL, FILM-FORMING METHOD, FILM AND DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a technique by which a zirconium base oxide film which is suitable for gate oxide film can be formed efficiently. SOLUTION: A zirconium-based material (R1R2)Zr (R1 and R2 are alkyl groups), dissolved in a solvent of hydrocarbon compound of the carbon number of 5-40 and an amine-based material of the carbon number of 2-40, is vaporized and a zirconium-based oxide film is formed on a substrate through chemical vapor deposition method. Also, an oxide film of Zr and Si is formed through vapor-phase growth method with a Si compound (R1R2N)nSiH4-n (R1 and R2 are alkyl groups, and n is an even number of 1-4) and (R1R2sN)Zr.