| 摘要 |
PROBLEM TO BE SOLVED: To provide a CVD system, capable of uniformly forming a thin film of a desired composition or particularly a high ferroelectric thin film from an interface from a substrate, to be formed with the film to the uppermost surface, and to provide a method for forming the film. SOLUTION: The CVD device comprises a reaction container 1, a susceptor 2 for supporting the substrate 3 to be formed with the film, a gas supply head 4 for supplying a raw gas to the substrate 3, and a raw gas supply control means (opening/closing valves 6 and 7) for switching to supply the raw gas from a raw gas supply means 5 to the gas supply head side or the venting side. In this case, the substrate 3 can be disposed at a waiting position, where the gas from the head 4 is hardly reaches and a film-forming position (position A), where the gas necessary to form the film is reached.
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