| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel manufacturing method, with which dislocation density of semiconductor crystals in a semiconductor element can be reduced, and a semiconductor element including a semiconductor single-crystal layer, having a low dislocation density layer formed by this method. SOLUTION: A plurality of grooves 4 in stripes, having a width W and a depth d, are formed in a main surface 1A of a single-crystal plate 1 at intervals of P. Then, an intermediate layer 2 is formed to cover the grooves 4 on the main surface 1A of the single-crystal plate 1 and a semiconductor single crystal layer 3 is formed on this intermediate layer 2.
|
