| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that conventionally a parasitic capacitance Cp, generated between a whirl-type wiring and a silicon substrate, and a resistance component Rp carried in the silicon substrate between the whirl-type wirings cannot be controlled sufficiently on inductor element. SOLUTION: In an inductor element, a whirl-type trench located between the whirl-type wirings and around these whirl type wirings is formed on a semiconductor substrate via an insulating layer, so that these whirl type wirings are surrounded by the trench. The inside of the trench is filled with an insulating material.
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