| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser device which uses a nitride semiconductor containing at least one element selected from among As, P, and Sb as a light emitting layer, has a small threshold current value, and is reduced in noise. SOLUTION: This nitride semiconductor laser device is provided with n-type nitride semiconductor layers 102-105 and p-type nitride semiconductor layers 107-110 formed on a substrate 100, and a light emitting layer 106 interposed between the n-type layers 102-105 and p-type layers 107-110. The light emitting layer 106 is composed of a well layer or a combination of the well layer and a barrier layer. At least the well layer of the layers constituting the light emitting layer 106 is composed of a nitride semiconductor containing one or more kinds of elements X selected from among a group composed of As, P, and Sb, N, and Ga. The atomic fraction of the elements X is smaller than that of N. The maximum injecting width of the current injected into the light emitting layer 106 through the p-type layers 107-110 is adjusted to 1.0-4.0μm.
|
