发明名称 METHOD AND DEVICE OF FORMING THICK FILM
摘要 PROBLEM TO BE SOLVED: To provide a method and device of forming a thick film capable of forming an electrode film with low resistance and a dielectric film with stable dielectric constant and high dielectric strength. SOLUTION: When a substrate 100 with a pre-burning silver electrode film 120 is fed into a burning furnace 10 by a conveyer 20, the most part of the organic material contained in the paste in the film 120 is burned at the area A of normal temperature-450 deg.C, and the burning is promoted due to ozone contained in the atmosphere at the above area A. Further, organic materials and carbon remained in the film 120 are burned at the area B of exceeding 450 deg.C, and organic materials and carbon remained in the film 120 disappear, because the burning reaction is promoted by the ozone still contained in the atmosphere at the area B.
申请公布号 JP2002093314(A) 申请公布日期 2002.03.29
申请号 JP20000275448 申请日期 2000.09.11
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YASUI HIDEAKI;SUGIMOTO KAZUHIKO;HASEGAWA KAZUYUKI;TANAKA HIROYOSHI
分类号 H01J9/02;H01B19/00;H01J11/22;H01J11/24;H01J11/26;H01J11/34;H01J11/36;H01J11/38;(IPC1-7):H01J9/02;H01J11/02 主分类号 H01J9/02
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