| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for pattern inspection for inspecting the defect of a pattern with high accuracy in a short time. SOLUTION: This pattern inspection device 1 has an SEM 5. When electron beams are irradiated on a semiconductor substrate 2 from the SEM 5, an SEM image is obtained by secondary electrons emitted from the surface of the semiconductor substrate 2. The SEM image data is sent to a defect analysis part 11 through a main control part 9. The defect analysis part 11 computes the distance between patterns on the basis of the SEM image data and compares the minimum value of the distance between the patterns with a set value. When the minimum value of the distance between the patterns is shorter than the set value, a parameter suitable for the inspection of a cell part is selected from a memory 12, and when the minimum value of the distance between the patterns is the set value or more, a parameter suitable for the inspection of a peripheral circuit part is selected from the memory 12. The selected parameter is used to make a defect analysis of the pattern. |
