| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor light emitting device which is reduced in threshold current by effectively confining light in a light emitting layer. SOLUTION: A semiconductor laser device 100 is constituted by laminating a buffer layer 2, undoped GaN layer 3, n-GaN contact layer 4, n-InGaN crack preventing layer 5, n-AlGaN clad layer 6, light emitting layer 7, p-AlGaN clad layer 8, and p-GaN contact layer 9 upon another in this order. The element 100 has a ridge section 10 composed of the p-GaN contact layer 9 and p-AlGaN clad layer 8, and the thickness t1 of the clad layer 8 in the ridge section 10 is adjusted to <0.3 μm. |
