METHOD FOR FABRICATING III-V NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a III-V nitride based semiconductor light emitting device having a high luminous efficiency by suppressing re-evaporation of a group III-V element. SOLUTION: In fabricating a III-V nitride-based semiconductor light emitting device by vapor phase epitaxial growth, supply of at least one of group III material gas or group III electron beam is reduced before growing a nitride- based semiconductor layer 5 following to growth of a quantum well light emitting layer 4 as compared with that in growing the quantum well light emitting layer 4 and a growth interruption process or a low rate growth process is carried out while supplying group V material gas or activation nitride.