| 摘要 |
PROBLEM TO BE SOLVED: To control an abnormal opening caused by deviation in the matching of a resist pattern when forming the opening of a semiconductor device. SOLUTION: First, second, and third processes are used in an opening formation process. The first process forms adjacent mask pattern regions 114 on the upper surface of a foundation uppermost layer 112 formed by the lamination of a plurality of layers while the mask pattern regions are mutually alienated. The second process forms an uppermost layer pattern region 112a by etching the uppermost layer 112 with the mask pattern region 114 as a first mask. The third process etches the periphery region other than the region between second masks from the surface of a remaining layer for forming an island-like capacity formation spare layer 188 with a composite layer comprising the first mask and the uppermost layer pattern region as a second mask 184. |
