| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable air-ridged semiconductor laser device having a long operating life. SOLUTION: The semiconductor laser device 10 is an AlGaInP-based air- ridged semiconductor laser element having a laminated structure formed by sequentially epitaxially growing an n-Al0.7GaInP lower clad layer 14, an AlGaAs active layer 16, a p-Al0.7GaInP upper clad layer 18, and a p-GaAs cap layer 20 on an n-GaAs substrate 12. On the top of the laminated structure, a stripe-like ridge section 22 is formed by etching the cap layer 20 and the upper part of the upper clad layer 18. The upper clad layer 18 is constituted of an upper layer 18a forming the ridge section 22 together with the cap layer 20 and a lower layer 18b which is extended outward from both lower side edges of the lower layer 18a and has a thickness of 0.3μm. On the upper surface of the lower upper clad layer 18b and the side faces of the ridge section except the top face of the ridge section, protective layers 24 composed of epitaxially grown n-GaAs and having thickness of 0.15μm are provided.
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