发明名称 CRYSTALLIZATION METHOD OF AMORPHOUS SILICON THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for generating an uniform and large polycrystalline silicon crystal particle by utilizing two amorphous silicon films and a crystal nucleus interposed in-between. SOLUTION: An improved method for crystallizing an amorphous silicon film in a polycrystalline silicon film, having a large crystal particle grain is disclosed. With the crystallization method, a first amorphous silicon film 6 is deposited on an oxide film 4, that is deposited for improving viscosity having a glass substrate 2 and for preventing contamination by approximately 10-300Å, and then a silane (SiH4) or disilane (Si2H6) gas is allowed to flow to form a silicon crystal nucleus 8 on the first amorphous silicon film 6. A second amorphous silicon 10 is re-deposited on the first amorphous silicon film, containing the crystal nucleus. An excimer laser 12 is applied to the amorphous silicon that is formed doubly for crystallization.
申请公布号 JP2002093706(A) 申请公布日期 2002.03.29
申请号 JP20010209858 申请日期 2001.07.10
申请人 SEMISYSCO CO LTD 发明人 RI JUNSHO;U HOSHU;RI SEISHU
分类号 H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/20 主分类号 H01L21/20
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