| 摘要 |
PROBLEM TO BE SOLVED: To accurately form wirings which are to be formed above a capacitor and a bit line, using a ferroelectric material or a high dielectric material and to prevent a deterioration of the capacitor in a semiconductor device having a memory cell. SOLUTION: The semiconductor device comprises a transistor having first and second impurity regions 15a, formed on a semiconductor substrate 10 and gate electrodes 13a and 13b formed on the substrate 10, a first insulating film 17 covering the transistor, a capacitor Q formed on the film 17 and having a dielectric film 24 made of a ferromagnetic material or a high dielectric material and an upper electrode 25 and a lower electrode 23 for sandwiching the film 24, and a second insulating film 33 formed on the capacitor Q and having a surface planarized by polishing and containing at least nitrogen on the surface. |
