| 摘要 |
PROBLEM TO BE SOLVED: To collect and analyze outgas discharged from a resist film, when the entire surface of the resist film is irradiated with an electron beam. SOLUTION: A stage 11 is provided at the bottom part in a chamber 10, in which a vacuum is produced and a semiconductor substrate 12, having the resist film formed its top surface, is held on the stage 11. An electron beam source 13 is provided at the top in the chamber 10 and irradiates the entire surface of the resist film on the semiconductor substrate 12. A gas-collecting pipe 15 is provided at a side part of the chamber 10, and the outgas discharged from the resist film is adsorbed by the active carbon of the gas-collecting pipe 15. A gas chromatograph/mass spectrometer 16, which analyzes the outgas, is provided to the gas-collecting pipe 16 on the opposite side from the chamber 10 and components of the outgas desorbed from the active carbon of the gas- collecting pipe 15 are analyzed quantitatively or qualitatively. |
