| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistive fuse composed of a heterojunction diode. SOLUTION: For the diode of single-crystal SiC(silicon carbide)/single-crystal Si(silicon) heterojunction, a single-crystal Si-SiC thin film (composition shifting layer) to be changed gradually, from single-crystal Si into SiC is grown on an Si substrate, a buffer layer is provided between the single-crystal SiC(silicon carbide)/the single-crystal Si(silicon), and this semiconductor-type resistive fuse is formed. It is easily manufactured compared to the conventional manufacturing method of the resistive fuse by elements, such as a CMOS and a resonance tunnel diode(RTD). Also, the SiC of a high performance semiconductor is a main material, practical use is possible, even under a high temperature of 200 deg.C and is suitable for application to a high-temperature environment.
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