| 摘要 |
PROBLEM TO BE SOLVED: To prevent polishing residues to be produced, without damaging an element isolation insulating film, even with a finer pattern dimension, for a method of manufacturing a semiconductor device, comprising a groove type element separation consisting of a polishing process with a CMP(chemo- mechanical polishing) method. SOLUTION: A protruding part occupying a relatively large region is selected from among a plurality of protruding parts formed on a semiconductor substrate. The edge part of the protruding part is covered, while a resist pattern 11 is formed which comprises an opening on the protruding part, used as a mask for anisotropic etching with an insulating film 7a. An insulating film 7c on the edge part of the protruding part is etched isotropically, so as not to erode the element isolation insulating film in the groove, reducing the height of the insulating film. After the resist pattern is removed, the insulating film is CMP- polished.
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