| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device where the flexibility for setting annealing treatment temperature is high, and switching time is short. SOLUTION: A lattice defect is formed by an ion implantation method (process S10), annealing treatment is carried out (process S12), an electrode preparation layer is formed after a low lifetime region is formed in an element-forming region (process S16), sintering treatment is carried out (process S18), and an electrode layer is formed on the surface of the element-forming region, thus freely setting temperature in the annealing treatment. Also the temperature in the annealing treatment can be set higher than that in the sintering treatment, thus increasing the density of lattice defects and shortening the switching time of the semiconductor device.
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