发明名称 PLASMA CVD SYSTEM, METHOD OF FORMING THIN FILM AND METHOD OF MANUFACTURING SOLAR CELL
摘要 <p>PROBLEM TO BE SOLVED: To provide a wafer holder for a film-forming apparatus, which can simultaneously form films on both front and rear surfaces of a wafer in one process, a plasma CVD system using this wafer holder, a method of forming thin films on both front and rear surface by using this device, and to provide a method of manufacturing a solar cell using this film-forming method. SOLUTION: A method for forming a thin film comprises a process in which a desired thin film is simultaneously formed on both sides of the substrate by means of a plasma CVD device provided with a specified anode plate and/or cathode plate, wherein an opening is formed in substantially identical shape with the substrate to be processed. Further, a method for manufacturing a solar cell comprises a process in which a thin film is simultaneously formed on both sides of the substrate, acting as an anti-reflection film on the surface of the silicon substrate and as a protective film on the back side thereof by means of the same plasma CVD device as used for thin film forming process.</p>
申请公布号 JP2002093722(A) 申请公布日期 2002.03.29
申请号 JP20000279782 申请日期 2000.09.14
申请人 MITSUBISHI ELECTRIC CORP 发明人 ISHIHARA TAKASHI;MATSUNO YOSHINORI
分类号 C23C16/04;C23C16/34;H01L21/205;H01L31/04;(IPC1-7):H01L21/205 主分类号 C23C16/04
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