发明名称 FERROMAGNETIC TUNNEL TYPE MAGNETO-RESISTANCE EFFECT HEAD HAVING SMALL BIAS DEPENDENCY OF MAGNETIC RESISTANCE RATIO
摘要 PROBLEM TO BE SOLVED: To provide a ferromagnetic tunnel type magneto-resistance effect head having small bias dependency of the magnetic resistance ratio and also high output power. SOLUTION: The ferromagnetic tunnel type magneto-resistance effect head having smaller bias dependency of the magnetic resistance ratio as compared with the conventional ferromagnetic tunnel type magneto-resistance effect element and also having the higher output power is obtained by placing an antiferromagnetic layer 13 adjacent to a half metal ferromagnetic layer 12.
申请公布号 JP2002092824(A) 申请公布日期 2002.03.29
申请号 JP20000273289 申请日期 2000.09.08
申请人 HITACHI LTD;UNIV NAGOYA 发明人 HAYAKAWA JUN;ITOU AKITOMO;MATSUI MASAAKI;ASANO HIDEFUMI
分类号 G01R33/09;G11B5/39;H01F10/08;H01F10/18;H01F10/20;H01F10/30;H01F10/32;H01L43/08;(IPC1-7):G11B5/39 主分类号 G01R33/09
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