| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory which holds high speed random access function by solving the problem of the ferroelectric capacitor size becoming large and the distance between this capacitor and the inter-contact distance being large resulting in the growth of a dead space for inter-contacts to be large in cell size, thereby reducing the memory cell size to allow the chip area to be reduced and facilitate the manufacture, without reducing design rules. SOLUTION: The semiconductor memory has a TC parallel unit series connected ferroelectric memory having upper electrodes TE of ferroelectric capacitors and first contacts cAA-M1 and cTE-M1 for connecting the upper electrodes TE to source or drain terminals of cell transistors. The first contact is formed at a position which includes a point equidistant from adjacent four upper electrodes TE in its region.</p> |
