| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein RC wiring delay is reduced, and a method for manufacturing the semiconductor device. SOLUTION: A semiconductor device 100 contains an interlayer insulating layer 20 which is arranged on a first wiring layer 14 and has an aperture 60 down to the first wiring layer 14. The aperture 60 is provided with a through hole 62 and a wiring trench 64 continuously connected with the through hole 62. A contact layer 92 is arranged in the through hole 62, and a wiring layer 94 is arranged in the wiring trench 64. The interlayer insulating layer 20 is provided with a first insulating layer 30, a second insulating layer 50 arranged on the first insulating layer 30, and an intermediate layer 40 arranged between the first insulating layer 30 and the second insulating layer 50. The intermediate layer 40 is composed of non-photosensitive organic based material. |
