| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor memory elements which effectively prevents oxidation of the plug of the semiconductor memory element. SOLUTION: Transistors composed of gates, sources and drains are formed on a semiconductor substrate. A lower electrode, a ferroelectric film and an upper electrode are laminated in this order above each transistor to form a capacitor. Then the capacitor recovers its ferroelectric film characteristics. After forming the capacitors and recovering the ferroelectric film characteristics have been carried out, plugs are formed each for connecting the capacitor to the source or drain of the transistor. The ferroelectric film is, e.g. a metal oxide film and a heat treatment in an oxidizing atmosphere recovers its characteristics. Since the plugs are formed after such a heat treatment, high reliability COP-structured semiconductor memory elements are realized.
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