METHOD OF MANUFACTURING INTEGRATED CIRCUIT ELEMENT CONTAINING INSULATING FILM AND INTEGRATED CIRCUIT ELEMENT FORMED THEREBY

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing an integrated circuit element, capable of reducing impurities such as hydrogen to be diffused in the element during a manufacturing process and the integrated circuit element thereby. SOLUTION: The method for manufacturing the integrated circuit element comprises a step of exposing at least a part of an insulating film, containing an oxygen with a metal precursor gas reactive with the oxygen to form a first metal oxide film, on at least part of the insulating film. The metal oxide film suppresses lowering of the electrical characteristics of the insulating film, by diffusing impurities such as the hydrogen in the insulating film.