| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing pad, its producing method and a method for polishing a semiconductor substrate in which the polishing rate is high, the global level difference is small, dishing is prevented in metal wiring, clogging and settling at the surface layer part are retarded and the polishing rate is stabilized at the time of planarizing local irregularities of a semiconductor substrate. SOLUTION: The polishing pad has micro rubber A hardness of 80 degrees or above and comprises a polymer of silicon and vinyl compound containing independent bubbles. |
