| 摘要 |
PURPOSE: A solid-state imaging device is provided to permit the operation for reading the signal charge from the signal accumulation portion to be easily effected and prevent thermal noise, dark current noise, image-lag and the like from occurring even when the readout potential applied to the readout gate electrode is lowered as the unit pixel is miniaturized and if the impurity concentration of the well region which is formed below the gate electrode and in which the channel region is formed is increased. CONSTITUTION: A solid-state imaging device comprises a semiconductor substrate including a surface region of a second conductivity type; and a plurality of unit pixels arranged in a matrix form on the surface region of the second conductivity type, the plurality of unit pixels forming an imaging area and each of the plurality of unit pixels including a first semiconductor region of a first conductivity type which is formed in a position separated by a preset distance from a surface of the surface region in a depth direction of the surface region and accumulates signal charges obtained by photo-electrical conversion of input light, and a gate electrode which is formed adjacent to the first semiconductor region above the surface region and controls readout of the signal charges accumulated in the first semiconductor region, end portions of the gate electrode and the first semiconductor region which substantially face each other being formed in positions separated by a preset distance in a horizontal direction.
|
