| 摘要 |
PURPOSE: A nonvolatile semiconductor memory and its manufacturing method are provided to improve the charge retention characteristics, and stabilize read operation using a selection transistor, and increase the operating speed of a peripheral transistor. CONSTITUTION: A nonvolatile semiconductor memory comprises a semiconductor substrate, a first transistor formed on a surface of the semiconductor substrate and including a first gate insulating film and a first gate electrode, and a second transistor formed on the surface of the semiconductor substrate and including a second gate insulating film and a second gate electrode, wherein the first gate insulating film includes a charge storage layer and the second gate insulating film does not include a charge storage layer, and the first and second transistors are isolated by a trench and the charge storage layer in the first transistor does not exist in an element isolation region and exists only below the first gate electrode in an element region is provided.
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