| 发明名称 |
Analog-to-digital converter and method of fabrication |
| 摘要 |
An integrated circuit has an isolation structure in the form of a double diode moat. The P substrate has P+ buried layers 8601 and 8602 on opposite sides of N+ buried layer 8605. Analog devices are formed behind one diode moat; digital CMOS devices are formed behind the other moat.
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| 申请公布号 |
US2002036326(A1) |
申请公布日期 |
2002.03.28 |
| 申请号 |
US20010973390 |
申请日期 |
2001.10.09 |
| 申请人 |
HARRIS CORPORATION |
发明人 |
DEJONG GLENN ALAN;ITO AKIRA;RHEE CHOONG-SUN |
| 分类号 |
G05F3/30;(IPC1-7):H01L29/76 |
主分类号 |
G05F3/30 |
| 代理机构 |
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