发明名称 |
Method and apparatus for low temperature annealing of metallization micro-structure in the production of a microelectronic device |
摘要 |
A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.
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申请公布号 |
US2002037641(A1) |
申请公布日期 |
2002.03.28 |
申请号 |
US20010882613 |
申请日期 |
2001.06.15 |
申请人 |
RITZDORF THOMAS L.;STEVENS E. HENRY;CHEN LINLIN;GRAHAM LYNDON W.;DUNDAS CURT |
发明人 |
RITZDORF THOMAS L.;STEVENS E. HENRY;CHEN LINLIN;GRAHAM LYNDON W.;DUNDAS CURT |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
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