| 摘要 |
The invention relates to a method for producing a new generation of giant magnetoresistance (GMR) sensors and tunnel magnetoresistance (TMR) sensors. According to the invention, a thin-film fixing layer is produced, for example, from a <i>5d</i> transition metal (W, Rd, Os, Ir, Pt) or from a <i>4d </i>transition metal (Pd, Rh, Ru) having a high magnetocrystalline anisotropy. Said thin-film fixing layer fixes the direction of magnetization of the fixed layer (<i>3d</i> ferromagnetic transition metals). A moment filter can be constructed with which the effectiveness of GMR and TMR sensors can be increased. |
