发明名称 |
Electrically programmable memory element with reduced area of contact and method for making same |
摘要 |
An electrically operated programmable resistance memory element having a conductive layer as an electrical contact. The conductive layer has a raised portion extending from an edge of the layer to an end adjacent the memory material.
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申请公布号 |
US2002036931(A1) |
申请公布日期 |
2002.03.28 |
申请号 |
US20010813267 |
申请日期 |
2001.03.20 |
申请人 |
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发明人 |
LOWREY TYLER;HUDGENS STEPHEN J.;KLERSY PATRICK |
分类号 |
G11C11/56;H01L27/24;H01L45/00;(IPC1-7):G11C29/00 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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