发明名称 Electrically programmable memory element with reduced area of contact and method for making same
摘要 An electrically operated programmable resistance memory element having a conductive layer as an electrical contact. The conductive layer has a raised portion extending from an edge of the layer to an end adjacent the memory material.
申请公布号 US2002036931(A1) 申请公布日期 2002.03.28
申请号 US20010813267 申请日期 2001.03.20
申请人 发明人 LOWREY TYLER;HUDGENS STEPHEN J.;KLERSY PATRICK
分类号 G11C11/56;H01L27/24;H01L45/00;(IPC1-7):G11C29/00 主分类号 G11C11/56
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