| 摘要 |
<p>A semiconductor device comprises means (7) for grading an electric field created in the active part (4) of the device when a high voltage is applied thereacross. Said means comprises a member (7) being of a material having a higher dielectric constant than the material of said active part and applied next to at least a portion of said active part where a high electric field occurs when a high voltage is applied across the device for obtaining a field grading for a condition of changing of said voltage.</p> |
