LATERAL SHIFT MEASUREMENT USING AN OPTICAL TECHNIQUE
摘要
The method for controlling layers alignment in a multi-layer sample (10), such a semiconductors wafer based on detecting a diffraction efficiency of radiation diffracted from the patterned structures (12, 14) located one above the other in two different layers of the sample.
申请公布号
WO0225723(A2)
申请公布日期
2002.03.28
申请号
WO2001IL00884
申请日期
2001.09.20
申请人
NOVA MEASURING INSTRUMENTS LTD.;BRILL, BOAZ;FINAROV, MOSHE;SCHEINER, DAVID
