| 摘要 |
<p>Semiconductor devices and processes for forming the same. The semiconductor device (10) includes field isolation regions (12) within trenches (14) lying within a semiconductor device substrate (11). The trenches (14) include a first trench and a second trench. The device includes a first component region and a second component region. The first component region lies near the first trench, and the second component region lies near the second trench. The semiconductor device includes a feature selected from a group consisting of: (a) a first liner (20) within the first trench (14), and a second liner (36) within the second trench (34), wherein the first liner (20) is significantly thicker than the second liner (36); and (b) the first component region has a first edge with a first radius of curvature near the first trench, and the second component has a second edge with a second radius (R2) of curvature near the second trench (34), wherein the first radius of curvature is significantly greater than the second radius of curvature (R2).</p> |
