发明名称 METHOD FOR IMPROVING THE SURFACE SMOOTHNESS, THE CRYSTAL STRUCTURE AND THE MICROWAVE SURFACE RESISTANCE OF YBa2Cu3O7- delta HIGH-TEMPERATURE SUPERCONDUCTOR FILMS GROWN ON CeO2-BUFFERED r-CUT SAPPHIRE SUBSTRATES
摘要 The invention comprises post-annealing of CeO2-buffered r-cut sapphire substrate at a temperature range of 960 - 1050 DEG C and growing high temperature superconductor YBa2Cu3O7- delta films on the post-annealed CeO2-buffered r-cut sapphire substrate.
申请公布号 WO0105726(A3) 申请公布日期 2002.03.28
申请号 WO2000KR00778 申请日期 2000.07.18
申请人 LEE, SANG, YOUNG 发明人 LEE, SANG, YOUNG
分类号 H01L21/86;C30B33/00;H01L39/24 主分类号 H01L21/86
代理机构 代理人
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