发明名称 |
METHOD FOR IMPROVING THE SURFACE SMOOTHNESS, THE CRYSTAL STRUCTURE AND THE MICROWAVE SURFACE RESISTANCE OF YBa2Cu3O7- delta HIGH-TEMPERATURE SUPERCONDUCTOR FILMS GROWN ON CeO2-BUFFERED r-CUT SAPPHIRE SUBSTRATES |
摘要 |
The invention comprises post-annealing of CeO2-buffered r-cut sapphire substrate at a temperature range of 960 - 1050 DEG C and growing high temperature superconductor YBa2Cu3O7- delta films on the post-annealed CeO2-buffered r-cut sapphire substrate. |
申请公布号 |
WO0105726(A3) |
申请公布日期 |
2002.03.28 |
申请号 |
WO2000KR00778 |
申请日期 |
2000.07.18 |
申请人 |
LEE, SANG, YOUNG |
发明人 |
LEE, SANG, YOUNG |
分类号 |
H01L21/86;C30B33/00;H01L39/24 |
主分类号 |
H01L21/86 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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