| 摘要 |
PURPOSE: An isolation method of a semiconductor device is provided to increase uniform planarization of an isolation layer made of an insulation material remaining after a chemical mechanical polishing(CMP) process, by improving step coverage of the upper surface of a gap-filling insulation material between an active region and an isolation region. CONSTITUTION: A hard mask is formed on a semiconductor substrate(200), covering the active region. The center portion of the hard mask is thicker than the edge of the hard mask. A predetermined depth of the exposed substrate not protected by the hard mask is eliminated to form a trench defining the isolation region. An insulation material layer(25) having such thickness to sufficiently fill the trench is formed on the substrate including the hard mask. A CMP process is performed regarding the insulation material layer to expose the center portion of the hard mask so that the insulation material layer is left only in the trench. The hard mask is eliminated.
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