Nonvolatile solid-state memory devices and memory using magnetoresistive effect, and recording/reproducing method of the memory device and memory

摘要

The fabrication process of a conventional MRAM using a magnetoresistive effect element as a memory device is difficult, and the device structure makes it difficult to decrease the cell area and increase the degree of integration. It is an object of this invention to realize an MRAM which can achieve a high integration degree. A memory device is characterized by including a magnetoresistive element, a bit line formed above this magnetoresistive element, and a write line. The magnetoresistive element is formed immediately above the drain region of a field-effect transistor.