发明名称 |
POLYMERS FOR PHOTORESIST COMPOSITIONS FOR MICROLITHOGRAPHY |
摘要 |
Nitrile/vinyl ether-containing polymers for photoresist compositions and microlithography methods employing the photoresist compositions are described. These photoresist compositions comprise 1) at least one ethylenically unsaturated compound comprised of a vinyl ether and 2) a nitrile-containing compound, e.g., acrylonitrile, which together impart high ultraviolet (UV) transparency and developability in basic media. In some embodiments, these photoresist compositions further comprise a fluoroalcohol group. The photoresist compositions of this invention have high UV transparency, particularly at short wavelengths, e.g., 157 nm and 193 nm, which property makes them useful for lithography at these short wavelengths. |
申请公布号 |
WO0186352(A3) |
申请公布日期 |
2002.03.28 |
申请号 |
WO2001US14520 |
申请日期 |
2001.05.04 |
申请人 |
E.I. DU PONT DE NEMOURS AND COMPANY;FRYD, MICHAEL;PERIYASAMY, MOOKKAN;SCHADT, FRANK, LEONARD, III |
发明人 |
FRYD, MICHAEL;PERIYASAMY, MOOKKAN;SCHADT, FRANK, LEONARD, III |
分类号 |
G03F7/004;G03F7/038;G03F7/039;H01L21/027 |
主分类号 |
G03F7/004 |
代理机构 |
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