发明名称 Producing metal layer, used in semiconductor technology and manufacture of integrated circuits, involves electrochemical growth of metal on substrate
摘要 Method for producing a metal layer by electrochemical growth of the metal on a substrate comprises assigning a measuring head to the substrate on which the metal is deposited by electrochemical growth. The measuring head is on the side facing the metal with structures filled by deposition of the metal, and its characteristics vary as a function of the degree of filling of the metal in the structures. An Independent claim is also included for a device used for producing a metal layer by electrochemical growth of the metal on a substrate. Preferred Features: The measuring head is structurally combined with the substrate or forms the substrate. The measuring head is formed by a piezoelectric quartz (5) whose oscillating circuit characteristics vary as a function of the degree of filling. The measuring head is coated with platinum and the electrochemically deposited metal is copper.
申请公布号 DE10043560(A1) 申请公布日期 2002.03.28
申请号 DE20001043560 申请日期 2000.09.01
申请人 INFINEON TECHNOLOGIES AG 发明人 HELNEDER, JOHANN
分类号 C25D21/12;G01N27/00;(IPC1-7):C25D21/12 主分类号 C25D21/12
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