| 摘要 |
The invention provides a CMOS image sensor that can decrease the influence of the noise charge on the OB cells that determine the darkness level and can prevent the deterioration of the image quality. A region that absorbs the noise charge in a substrate is formed at the periphery of the cell array portion. As in the photodiode, a PN junction is formed in the noise charge absorption region, and one end thereof is connected to a power source voltage. This noise charge absorption region is formed between the cell array portion and the peripheral circuit portion.
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