| 发明名称 |
Multi-bit magnetic memory cells |
| 摘要 |
A magnetic memory cell includes first and second magneto-resistive devices connected in series. The first and second magneto-resistive devices have sense layers with different coercivities. Magnetic Random Access Memory (MRAM) devices may include arrays of these memory cells.
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| 申请公布号 |
US2002036331(A1) |
申请公布日期 |
2002.03.28 |
| 申请号 |
US20010925755 |
申请日期 |
2001.08.09 |
| 申请人 |
NICKEL JANICE H.;BHATTACHARYYA MANOJ |
发明人 |
NICKEL JANICE H.;BHATTACHARYYA MANOJ |
| 分类号 |
G11C11/14;G11C11/15;G11C11/16;G11C11/56;H01F10/30;H01L21/8246;H01L27/105;H01L43/00;H01L43/08;(IPC1-7):H01L43/00;H01L29/82 |
主分类号 |
G11C11/14 |
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