| 摘要 |
<p>A method of forming a trench can be used in the fabrication of dynamic random access memory (DRAM) cells. In one aspect, a first layer of a first material (e.g., polysilicon) (104) is formed over a semiconductor region (e.g., a silicon substrate) (100). The first layer is patterned to remove portions of the first material. A second material (e.g., oxide) (112, 120) can then be deposited to fill the portions where the first material was removed. After removing the remaining portions of the first layer of first material, a trench (122) can be etched in the semiconductor region. The trench would be substantially aligned to the second material.</p> |
