METHOD OF PRODUCING SILICON WAFER AND SILICON WAFER

摘要

A method of producing a silicon wafer comprising the steps of growing a nitrogen-doped silicon single-crystal bar having a resistivity of at least 100 OMEGA .cm and an initial interstitial oxygen concentration of 10-25 ppma by a CZ method, processing the silicon single-crystal bar into a wafer, and heat-treating the wafer to thereby reduce a residual interstitial oxygen concentration in the wafer to up to 8 ppma; and a method of producing silicon wafer comprising the steps of growing a nitrogen-doped silicon single-crystal bar having a resistivity of at least 100 OMEGA .cm and an initial interstitial oxygen concentration of up to 8 ppma by a CZ method, processing the silicon single-crystal bar into a wafer, and heat-treating the wafer to thereby form an oxygen deposition layer on a wafer bulk unit; and a silicon wafer produced by these production methods, whereby forming a high-quality DZ layer and positively providing a DZ-IG wafer capable retaining a high resistivity despite a device production heat treating.