Evaluating pattern for measuring an erosion of a semiconductor wafer polished by a chemical mechanical polishing,申请号US20010770501-传众专利搜索

发明名称	Evaluating pattern for measuring an erosion of a semiconductor wafer polished by a chemical mechanical polishing
摘要	An evaluating pattern is comprised of a conductive pattern which has a rectangular configuration, an insulating layer which is formed on the conductive pattern, and a conductive material filled into contact holes which is formed in the insulating layer on the middle of the conductive pattern.
申请公布号	US2002036505(A1)	申请公布日期	2002.03.28
申请号	US20010770501	申请日期	2001.01.29
申请人	NARITA TADASHI	发明人	NARITA TADASHI
分类号	B60B9/12;B24B37/04;B24B49/10;B60B9/14;G01R31/28;H01L21/304;H01L21/3205;H01L21/66;H01L21/768;H01L23/52;H01L23/522;H01L23/544;(IPC1-7):G01R31/00	主分类号	B60B9/12
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