| 发明名称 |
Semiconductor device e.g. MOSFET has gate insulating film consisting of deuterium atom content silicon nitride film and silicon oxide film |
| 摘要 |
The gate insulating film is constituted by deuterium atom content silicon nitride film and silicon oxide film. An Independent claim is included for SOI substrate.
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| 申请公布号 |
DE10115489(A1) |
申请公布日期 |
2002.03.28 |
| 申请号 |
DE20011015489 |
申请日期 |
2001.03.29 |
| 申请人 |
MITSUBISHI DENKI K.K., TOKIO/TOKYO |
发明人 |
KUNIKIYO, TATSUYA |
| 分类号 |
H01L21/283;H01L21/02;H01L21/28;H01L21/30;H01L21/316;H01L21/336;H01L21/76;H01L21/762;H01L21/8234;H01L21/8238;H01L21/8242;H01L21/8244;H01L21/8247;H01L27/08;H01L27/088;H01L27/092;H01L27/108;H01L27/11;H01L27/115;H01L27/12;H01L29/49;H01L29/51;H01L29/78;H01L29/786;H01L29/788;H01L29/792;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/283 |
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