| 摘要 |
In the step of forming a microcrystalline i-type semiconductor layer by high-frequency plasma CVD, where an area of the parallel-plate electrode is represented by S; a width of the discharge space in its direction perpendicular to the transport direction of the belt-like substrate, by Ws; a width of a region formed by the parallel-plate electrode together with its surrounding insulating region, in its direction perpendicular to the transport direction of the belt-like substrate, by Wc; a width of the belt-like substrate in the direction perpendicular to its transport, by Wk; a distance between the parallel-plate electrode and the belt-like substrate, by h; a power density at which crystal fraction begins to saturate at predetermined substrate temperature, material gas flow rate and pressure, by Pd; and a high-frequency power, by P; these are set as follows:<paragraph lvl="0"><in-line-formula>2h/(Ws-Wc)>=2.5, (Ws/h)x2(Ws-Wk)/[4h+(Ws-Wc)]>=10, and P>=(10/8)xPdxS.</in-line-formula>This enables formation of a microcrystalline semiconductor layer having less characteristics distribution in the width direction of a belt-like substrate, and photovoltaic devices having uniform photoelectric conversion efficiency can be mass-produced by a roll-to-roll system.
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