| 摘要 |
PURPOSE: An electrostatic chuck for fixing a wafer is provided to increase attraction force for fixing the electrostatic chuck, by forming oxide silicon made of a dielectric so that the dielectric having a high dielectric constant and a thin thickness can be fabricated. CONSTITUTION: A cathode pole is a circular type. An anode pole(52) of a doughnut type is disposed outside the circular cathode pole(50). A cathode pole(54) of a doughnut type is disposed outside the doughnut-type anode pole. The first oxide layer is grown on the circular cathode pole, the doughnut-type anode pole and the doughnut-type cathode pole, in a gap where the poles are separated, and under the doughnut-type anode pole, by a thermal oxidation. The second oxide layer is formed in a base(40) made of an aluminum material by an anodizing process. A groove where the poles are inserted is formed in the base. A voltage supply unit(30) passes through a hole penetrating the base and is connected to the doughnut-type anode pole by an interconnection. The voltage supply unit supplies a constant voltage for generating electrostatic force, connected to the base by another interconnection.
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