Insulated gate semiconductor device

摘要

An insulated gate semiconductor device comprises: a semiconductor substrate having a first semiconductor region (11) on one surface, a second semiconductor region (12) of a second conductivity type v adjacent to said first semiconductor region on the other surface, a plurality of third semiconductor regions (13) of the first conductivity type extending into said second semiconductor region, two fourth (14) semiconductor regions, of the second conductivity type, extending into each of said third semiconductor regions, and a plurality of insulating gates (21, 22, 31) formed on the other of the pair of main surfaces, wherein a length (B) of each of said insulating gates, from one side to another opposed side of each insulating gate, is longer than a distance (A) between adjacent sides of adjacent insulating gates.