发明名称 |
Programmable neuron mosfet |
摘要 |
<p>The instant invention describes a programmable neuron MOSFET structure formed on SOI substrates. A number of input capacitor structures (241, 231) are formed on a SOI substrate. The substrate region of the capacitors (330,340) are completely isolated from each other by isolation structures (270). In addition the transistor structure (210) of the neuron MOSFET is completely isolated from the capacitor structures (241, 231) by the isolation structure (270). The neuron MOSFET also comprises a contiguous floating conductive layer (200, 230, and 240) which forms the gate structure of the capacitors (230, 240) and the floating gate (200) of the transistor structure. <IMAGE></p> |
申请公布号 |
EP1191479(A1) |
申请公布日期 |
2002.03.27 |
申请号 |
EP20010000494 |
申请日期 |
2001.09.21 |
申请人 |
TEXAS INSTRUMENTS INC. |
发明人 |
BABCOCK, JEFFREY A.;BALSTER, SCOTT G.;HOWARD, GREGORY E.;PINTO, ANGELO;STEINMANN, PHILIPP |
分类号 |
H01L27/08;H01L27/115;H01L27/12;H01L29/786;H01L29/788;(IPC1-7):G06N3/063 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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